In this writing, we will discuss  Power Electronics, In this blog, we will discuss the control characteristics of power switching devices.

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The power semiconductor devices can be operated as switches by applying control signals to the gate terminal of thyristors. The required output is obtained by varying the conduction time of these switching devices.

Classification of Semiconductor Switching device

  1. Uncontrolled turn on and Off [Diode]
  2. Controlled turn on and Uncontrolled turn off [SCR]
  3. Controlled turn-on and off characteristics [BJT, MOSFET, GTO]
  4. Continuous gate signal requirement [BJT, MOSFET]
  5. Pulse Gate Requirement [SCR, GTO]
  6. Bipolar Voltage-withstanding capability [SCR]
  7. Unipolar Voltage-withstanding capability [BJT, MOSFET, GTO]
  8. Bidirectional Current capability [TRIAC, RCT]
  9. Unidirectional Current Capability [SCR, GTO, BJT, MOSFET, Diode]
The figure shows the output voltages and control characteristics of commonly used power switching devices.
Thyristor switch:


GTO/MTO/ETO/IGCT/MCT/SITH switch:


Transistor switch



MOSFET/IGBT switch